^ztni-conducto'i ^prodaati, one. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 pmd 20k series 150 watt (14 amp continuous, 20 amp peak) features ? electrical specifications guaranteed for operating junction temperature range of 0 - 150c ? guaranteed and 100% tested for isb (secondary breakdown current) insur- ing maximum performance at high energy levels ? built-in speed up diode for fast turn-off with negative base drive ? low thermal resistance for more use- able power and lower operating temperatures ? hermetically sealed description the pmd 20k series of devices are three-terminal npn switching darlington power transistors. these devices are monolithic epitaxial base structures with built-in base to emitter shunt resistors. they have been designed to switch at frequencies up to 30khz. the devices are cvd glass passivated to increase reliability and provide reduced high- temperature reverse leakage current. internal diode protection (d1) of the darlington configuration is built into the structure to limit the device power dissipa- tion during negative overshoot. diode d2 is built-in to reduce device turn-off time when negative base drive is used. absolute maximum ratings parameter collector emitter voltage pmd 20k120 PMD20K150 pmd 20k200 collector base voltage PMD20K120 pmd 20k150 pmd 20k200 emitter base voltage collector current continuous peak base current thermal resistance total internal power dissipation <&? tc = 0c' operating junction and storage temperature symbol vceo vcbo vebo "c ib ejc pd t, tstg maximum 120 150 200 120 150 200 2 14 20 0.5 1.0 150 -65 to +150 -65 to +200 units vrjc vdc vdc adc adc "c/watt watts c > for operation above tc = 0c. derate PMD20K120 pmd 20k150 pmd 20k200 voltage rating 120v 150v 200v excellent thermal resistance junction to case (6jc) provides for more useable power at lower operating temperatures. this, coupled with 100% isb testing, insures optimum performance and dura- bility in power applications such as switching regulators and inverters. these darlington devices are hermetically sealed steel to-3 packages providing high reliability and low thermal resistance. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
pmd 20k series electrical characteristics all parameters are guaranteed at t, = 0 to 150c, unless otherwise specified. parameter symbol test conditions minimum maximum units on characteristics collector emitter saturation voltage1 base emitter turn-on voltage1 base emitter saturation1 dc current gain1 forward bias secondary breakdown current secondary breakdown energy vce(sat) vbe(oii) vsefsat) "re 's/b ej/d lc = 10 adc; ib = 50 madc lc = 10 adc; vce = 3 vdc lc = 10 adc; ib = 50 madc lc = 10 adc; vce = 3 vdc vce = 26 vdc; ta = 25c 1 sec non-repetitive pulse lc = 8.43 adc; l = 45tih ta = 25'c 300 5.8 1.6 1,72 1.8 2.62 2.8 2.6^ 2.8 vdc vdc vdc adc mjoules off characteristics collector emitter breakdown voltage1 (base open) pmd 20k120 pmd 20k150 pmd 20k200 collector emitter sustaining voltage1 pmd 20k120 PMD20K150 pmd 20k200 emitter base leakage current collector emitter leakage current pmd 20k120 pmd 20k150 pmd 20k200 collector emitter leakage current (base open)? pmd 20k120 pmd 20k150 pmd 20k200 v(br)ceo v(sus)cer iebo icer 'ceo lce = 100 madc; ib = 0 tj = 25c ice - 100 madc; rue = 2.2kn veb = 0.9 vdc; lc = oa vce = 80 vdc; rbe = 2.2kfl vce = 100 vdc; rbe = 2.2ko vce = 150vdc;rbe = 2.2kn vce = 80 vdc vce = 100 vdc vce = 150 vdc 120 150 200 120 150 200 70 5.0 5.0 5.0 0.5 0.5 0.5 vdc vdc madc madc madc dynamic characteristics" rise time turn-on time fall time turn-off time t, t? t, u lc = 10 adc; vcc = 30v lc = 10 adc; vcc - 30v lc = 10 adc; vcc = 30v lc = 10 adc; vcc = 30v 0.3 0.5 0.8 1.0 (^s ^s (is m.s (1) pulsa tested with pulse width ^ 300 m.s and duty cycle s 2.0%. (2) l = 25'c, |3) see ac test circuit.
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